HCS08 datasheet(40/198 Pages) NXP

40 / 198 page

Chapter 4 Memory Map and Register Definition

MC9S08QD4 Series MCU Data Sheet, Rev. 6

Freescale Semiconductor

program command is issued, the charge pump is enabled and then remains enabled after completion of the

burst program operation if these two conditions are met:

•

The next burst program command has been queued before the current program operation has

completed.

•

The next sequential address selects a byte on the same physical row as the current byte being

programmed. A row of flash memory consists of 64 bytes. A byte within a row is selected by

addresses A5 through A0. A new row begins when addresses A5 through A0 are all 0s.

The first byte of a series of sequential bytes being programmed in burst mode will take the same amount

of time to program as a byte programmed in standard mode. Subsequent bytes will program in the burst

program time provided that the conditions above are met. In the case the next sequential address is the

beginning of a new row, the program time for that byte will be the standard time instead of the burst time.

This is because the high voltage to the array must be disabled and then enabled again. If a new burst

command has not been queued before the current command completes, then the charge pump will be

disabled and high voltage removed from the array.

HCS08 데이터시트(PDF) 40 Page - NXP Semiconductors