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MPC821 데이터시트(PDF) 201 Page - NXP Semiconductors |
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MPC821 데이터시트(HTML) 201 Page - NXP Semiconductors |
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201 / 242 page ![]() Support Information MOTOROLA MPC860TFADS Daughter Board Design Specification—Rev 0.1 25 PRELIMINARY—SUBJECT TO CHANGE WITHOUT NOTICE 51 GPL2~ I, L General Purpose Line 2 for UPMA or UPMB. Used with the SDRAM, as a CAS~ signal. 52 GND 53 WE3~ I, L GPCM Write Enable 3 or PCMCIA WE~. Selects the LSB within a word for the Flash Simm or qualifies Writes for the PC-Card. 54 GND 55 WE2~ I, L GPCM Write Enable 2 or PCMCIA OE~. Selects the offset 2 Byte within a word for the Flash Simm or open data buffers for read from PC-Card. 56 GND 57 WE1~ I, L GPCM Write Enable1 or PCMCIA I/O Write. Used to qualify write cycles to the Flash memory and as I/O Write for the PCMCIA channel. 58 GND 59 BS2A~ I, L Byte Select 2 for UPMA. Selects offset 2 bytes within Word. Used for Dram access. 60 GND 61 WE0~ I, L GPCM Write Enable 0 or PCMCIA I/O Read. Used to qualify write cycles to the Flash memory and as I/O Reads from PC-Card. 62 GND 63 SPARE1 I,O, L MPC spare line 1. Pulled - up but otherwise unused on the FADS. 64 GND 65 EDOOE~ I,L In fact UPMA or UPMB General Purpose Line 1. Used for Output Enable with EDO Dram simms, which have this input (most of them don’t). Used also as RAS signal for the SDRAM. 66 GND 67 BS0A~ I, L Byte Select 0 from UPMA. Selects offset 0 Bytes within a word. Used as one of the CAS~ lines for Dram access. 68 GND 69 BS3A~ I, L Byte Select 3 from UPMA. Selects offset 3 Bytes within a word. Used as one of the CAS~ lines for Dram access. 70 GND 71 A31 I, T.S. MPC’s Address line 31. 72 GND 73 BS1A~ I, L Byte Select 1 from UPMA. Selects offset 1 Bytes within a word. Used as one of the CAS~ lines for Dram access. 74 GND TABLE 5-9. PM1 Interconnect Signals Pin No. Signal Name Attribute Description Freescale Semiconductor, Inc. For More Information On This Product, Go to: www.freescale.com |
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