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DSP56366P 데이터시트(PDF) 28 Page - NXP Semiconductors |
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DSP56366P 데이터시트(HTML) 28 Page - NXP Semiconductors |
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28 / 110 page ![]() DSP56366 Technical Data, Rev. 3.1 3-2 Freescale Semiconductor 3.3 Thermal Characteristics Operating temperature range TJ −40 to +110 °C Storage temperature TSTG −55 to +125 °C 1 GND = 0 V, V CC = 3.3 V ± 0.16 V, TJ = –40°C to +110°C, CL = 50 pF 2 Absolute maximum ratings are stress ratings only, and functional operation at the maximum is not guaranteed. Stress beyond the maximum rating may affect device reliability or cause permanent damage to the device. 3 CAUTION: All “5 V Tolerant” input voltages must not be more than 3.95 V greater than the supply voltage; this restriction applies to “power on”, as well as during normal operation. In any case, the input voltages cannot be more than 5.75 V. “5 V Tolerant” inputs are inputs that tolerate 5 V. Table 3-2 Thermal Characteristics Characteristic Symbol LQFP Value Unit Junction-to-ambient thermal resistance1, 2 Natural Convection 1 Junction temperature is a function of die size, on-chip power dissipation, package thermal resistance, mounting site (board) temperature, ambient temperature, air flow, power dissipation of other components on the board, and board thermal resistance. 2 Per SEMI G38-87 and JEDEC JESD51-2 with the single layer board horizontal. RθJA or θJA 37 °C/W Junction-to-case thermal resistance3 3 Thermal resistance between the die and the case top surface as measured by the cold plate method (MIL SPEC-883 Method 1012.1). RθJC or θJC 7 °C/W Thermal characterization parameter4 Natural Convection 4 Thermal characterization parameter indicating the temperature difference between package top and the junction temperature per JEDEC JESD51-2. When Greek letters are not available, the thermal characterization parameter is written as Psi-JT. Ψ JT 2.0 °C/W Table 3-1 Maximum Ratings (continued) Rating1 Symbol Value1, 2 Unit |
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