H5GQ1H24AFR-R0C datasheet(73/173 Pages) HYNIX

73 / 173 page

This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any

responsability for use of circuits described. No patent licenses are implied.

Rev. 1.0 /Nov. 2009

H5GQ1H24AFR

Figure 44. Single WRITE without EDC

CK#

ADDRESS

DBI#

WCK#

WCK

DBI

n+7

Bank a,

Col n

WL = WLmrs = 3

T3n

T4n

EDC Hold Pattern

EDC

3. For WRITE operations it is important that the latching point meet the data valid window requirements, which may or may not be center aligned at the pins.

4. Before the WRITE commands, an ACTIVE (ACT) command is required to be issued to the GDDR5 SGRAM and tRCDWR must be met.

1. WLmrs = 3 is shown as an example. Actual supported values will be found in the MR and AC timings sections.

2. WCK and CK are shown aligned (tWCK2CKPIN=0, tWCK2CK=0) for illustration purposes. WCK2CK training determines the needed offset between WCK and CK.

Notes:

5. tWCK2DQI = 0 is shown for illustration purposes.

DONʹT CARE

TRANSITIONING DATA

NOP

WRITE

COMMAND

NOP

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