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H5GQ1H24AFR-R0C 데이터시트(PDF) 74 Page - Hynix Semiconductor

부품명 H5GQ1H24AFR-R0C
상세설명  1Gb (32Mx32) GDDR5 SGRAM
PDF  173 Pages
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제조업체  HYNIX [Hynix Semiconductor]
홈페이지  http://www.skhynix.com/kor/main.do
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This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any
responsability for use of circuits described. No patent licenses are implied.
Rev. 1.0 /Nov. 2009
74
H5GQ1H24AFR
Figure 45. Single WRITE with EDC
2.  WCK and CK are shown aligned (tWCK2CKPIN=0, tWCK2CK=0) for illustration purposes.  WCK2CK training determines the needed offset between WCK and CK.
3.  For WRITE operations it is important that the latching point meet the data valid window requirements, which may or may not be center aligned at the pins. 
4.  Before the WRITE commands, an ACTIVE (ACT) command is required to be issued to the GDDR5 SGRAM and tRCDWR must be met.
WL = WLmrs = 3
T1
T2
T0
T3
T4
T5
T11
T12
T13
T3n
T4n
Bank a,
Col n
Col n
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(
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(
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(
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(
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CRCWL = 8
EDC Hold Pattern
EDC Hold 
Pattern
(
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(
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(
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(
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DO
DO
DBI
DBI
n+7
n+7
n
n
CK
CK#
DQ
DBI#
WCK#
WCK
EDC
(
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(
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(
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(
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EDC
EDC
n+7
n
1.  WLmrs = 3 and CRCWL = 8 is shown as an example.  Actual supported values will be found in the MR and AC timings sections.
5.  tWCK2DQI, tWCKDQO = 0 is shown for illustration purposes.
Notes:
DONʹT CARE
TRANSITIONING DATA
NOP
WRITE
NOP
NOP
NOP
NOP
NOP
NOP
NOP
ADDRESS
COMMAND
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