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H5GQ1H24AFR-R0C 데이터시트(PDF) 37 Page - Hynix Semiconductor

부품명 H5GQ1H24AFR-R0C
상세설명  1Gb (32Mx32) GDDR5 SGRAM
PDF  173 Pages
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제조업체  HYNIX [Hynix Semiconductor]
홈페이지  http://www.skhynix.com/kor/main.do
Logo HYNIX - Hynix Semiconductor

H5GQ1H24AFR-R0C 데이터시트(HTML) 37 Page - Hynix Semiconductor

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This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any
responsability for use of circuits described. No patent licenses are implied.
Rev. 1.0 /Nov. 2009
37
H5GQ1H24AFR
Data from any RDTR burst may be concatenated with data from a subsequent RDTR command. A contin‐
uous flow of data can be maintained. The first data element from the new burst follows the last element of 
a completed burst. The new RDTR command should be issued after the first RDTR command according to 
the tCCDS timing.
A WRTR can be issued any time after a RDTR command as long as the bus turn around time tRTW is met.
The total number of RDTR commands modulo FIFO depth must be equal to total number of WRTR com‐
mands modulo FIFO depth when used in conjunction with WRTR. No READ or WRITE commands are 
allowed between WRTR and RDTR.
The total number of RDTR commands modulo FIFO depth must be equal to the total number of LDFF 
commands to burst position 7 modulo FIFO depth when used in conjunction with LDFF. No READ or 
WRITE commands are allowed between LDFF and RDTR.



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