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CC1110-RTR1 데이터시트(PDF) 147 Page - Texas Instruments

부품명 CC1110-RTR1
상세설명  True System-on-Chip with Low Power RF Transceiver and 8051 MCU
PDF  203 Pages
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CC1110-RTR1 데이터시트(HTML) 147 Page - Texas Instruments

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CC1110
CC1110 PRELIMINARY Datasheet (Rev. 1.01) SWRS033A
Page 147 of 202
13.14 Flash Controller
The
CC1110 contains 32 KB flash memory
for storage of program code. The flash
memory is programmable from the user
software.
The Flash Controller handles writing and
erasing the embedded 32 KB flash
memory. The embedded flash memory
consists of 32 pages of 1024 bytes each.
The flash memory is byte-addressable
from
the
CPU
and
16-bit
word-
programmable.
The flash controller has the following
features:
•
16-bit word programmable
•
Page erase
•
Lock bits for write-protection and code
security
•
Flash erase timing 20 ms
•
Flash write timing 20 µs
13.14.1 Flash Write
Data is written to the flash memory by
using a program command initiated by
writing the Flash Control register, FCTL.
Flash write operations can program any
number of locations in the flash memory at
a time – it is however important to make
sure the pages to be written are erased
first.
A write operation is performed using one
out of two methods;
•
Through DMA transfer
•
Through CPU SFR access.
The DMA transfer method is the preferred
way to write to the flash memory.
A write operation is initiated by writing a 1
to FCTL.WRITE. The address to start
writing at, is given by FADDRH:FADDRL.
During
each
single
write
operation
FCTL.SWBSY is set high. During a write
operation the data written to the FWDATA
register is forwarded to the flash memory.
The
flash
memory
is
16-bit
word-
programmable, meaning data is written as
16-bit words. Therefore the actual writing
to flash memory takes place each time two
bytes have been written to FWDATA.
The CPU will not be able to access the
flash, e.g. to read program code, while a
flash write operation is in progress.
Therefore the program code executing the
flash write must be executed from RAM,
meaning that the program code must
reside in the area 0xF000 to 0xFF00 in
CODE memory space.
When a flash write operation is executed
from RAM, the CPU continues to execute
code from the next instruction after the
write to FWDATA, which initiated the flash
write operation.
The FCTL.SWBSY bit must be 0 before
accessing the flash after a flash write,
otherwise an access violation occurs. This
also means that FCTL.SWBSY must be 0
before program execution can continue at
a location in flash memory i.e. from the
area 0x0000 to 0x7FFF in CODE memory
space.
13.14.1.1 DMA Flash Write
When using DMA write operations, the
data to be written into flash is stored in
DATA/XDATA memory. A DMA channel is
configured to read the data to be written
from memory and write this data to the
Flash Write Data register, FWDATA with the
DMA trigger event FL enabled. Thus the
Flash Controller will trigger a DMA transfer
when the Flash Write Data register,
FWDATA, is ready to receive new data. The
DMA channel should be configured to
perform a block to fixed, single mode, byte
size transfers.
When the DMA channel is armed, starting
a flash write will trigger the first DMA
transfer.
Figure 29 shows an example how a DMA
channel is configured and how a DMA
transfer is initiated to write a block of data
from a location in XDATA to flash memory.



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