L6986I_V01 datasheet(6/60 Pages) STMICROELECTRONICS

6 / 60 page

Symbol

Parameter

Test condition

Min.

Typ.

Max

Unit

VSS START

Start of internal error amplifier

ramp

0.995

1.1

1.150

SSGAIN

SS/INH to internal error amplifier

gain

Error amplifier

VFB

Voltage feedback

0.841

0.85

0.859

IFB

FB biasing current

500

µA

Error amplifier gain (1)

100

ICOMP

EA output current capability

± 6

±12

±25

µA

Inner current loop

gCS

Current sense transconductance

(VCOMP to inductor current gain)

(1)

Ipk = 1 A

2.5

A/V

VPP*gCS

Slope compensation (2)

0.45

0.75

1.1

Overvoltage protection

VOVP

Overvoltage trip (VOVP/VREF)

1.15

1.2

1.25

VOVP HYST

Overvoltage hysteresis

0.5

Synchronization (fanout: 6 slave devices typ.)

fSYNCH

Synchronization frequency

FSW = VCC

275

1000

kHz

FSW = GND

475

2200

VSYN TH

SYNCH input threshold

SYNCH rising

0.70

1.2

ISYN

SYNCH pull-down current

VSYN = 1.2 V

0.7

VSYN OUT

High level output

5 mA sinking load

1.40

Low level output

0.7 mA sourcing load

0.6

Reset

VTHR

Selected RST threshold

MLF pinstrapping before SS

VTHR HYST

RST hysteresis (1)

0.4

VRST

RST open collector output

VIN > VIN HAND VFB < VTH4 mA sinking

load

0.8

2 < VIN < VINH 4 mA sinking load

Delay

VTHD

RST open collector released as

soon as VDELAY > VTHD

VFB > VTHR

1.19

1.234

1.258

ID CH

CDELAY charging current

VFB > VTHR

µA

Thermal shutdown

TSHDWN

Thermal shutdown temperature (1)

165

°C

THYS

Thermal shutdown hysteresis (1)

1. Not tested in production.

2. Measured at fSW = 250 kHz.

L6986I

Electrical characteristics

DS13647 - Rev 2

page 6/60

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