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DIO59618A 데이터시트(PDF) 9 Page - DIOO MICROCIRCUITS CO., LTD

부품명 DIO59618A
상세설명  30 V, 1.5 A High Efficiency Single-cell Li-Ion Battery Charger with Integrated Power Path
PDF  33 Pages
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제조업체  DIOO [DIOO MICROCIRCUITS CO., LTD]
홈페이지  https://www.dioo.com/#/
Logo DIOO - DIOO MICROCIRCUITS CO., LTD

DIO59618A 데이터시트(HTML) 9 Page - DIOO MICROCIRCUITS CO., LTD

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DIO59618A
Version 1.0, Oct 2025
www.dioo.com
© 2025 Dioo Microcircuits Co., Ltd. Jiangsu
5
5. Electrical Characteristics
VBUS = 5 V, TA = 25°C, unless otherwise specified.
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
System
ISTDB
Standby current
6
9
μA
ISHIP
Ship current, LDO enabled
4
8
μA
Ship current, LDO disabled
1
3
μA
Bias supply (VBUS)
VBUS
Supply voltage
4.5
5.5
V
VUVLO
Input UVLO threshold
VBUS rising and measured from VBUS
to GND
4.1
4.3
4.45
V
ΔVUVLO
UVLO hysteresis
Measured from VBUS to GND
200
mV
VOVP
Input overvoltage protection
Input overvoltage rising and
measured from VBUS to GND
5.8
6
6.3
V
ΔVOVP
Input overvoltage protection
hysteresis
Measured from VBUS to GND
200
mV
VSP
Voltage sag protection
4.5
4.7
V
IBUS_LIMIT
VBUS limit current
2.5
3
3.5
A
Power supplies
IBUS
VBUS current
VBUS > VBUS(min), PWM enabled,
not switching
0.45
mA
ILKG
VBAT to VBUS leakage current
0°C < TA < 85°C, VBAT = 4.2 V,
VBUS = 0 V
1
μA
IBAT
Battery is charge current in
high-impedance mode
0°C < TA < 85°C,
VBAT = 4.2 V
2
μA
Charger voltage regulation
VOREG
Float voltage(2)
TA = 25°C
4.2
V
Charge voltage accuracy
TA = 25°C
-0.5
0.5
%
ΔVRCH
Recharge voltage
150
200
250
mV
Deglitch time
VBAT falling below VRCH threshold
30
ms
Oscillator and PWM
fSW
Switching frequency
VBUS
= 5.0 V, VBAT = 3.8 V, ICC =
500 mA
800
1000
1200
kHz
Power MOSFET
RMAINHS(1)
RDS(ON) of high side P-FET
Q1
140
mΩ
RMAINLS(1)
RDS(ON) of low side N-FET
Q2
100
mΩ
R_BUS
RDS(ON) of VBUS input
Q3 + Q4
180
mΩ



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