PIFE32251B-R47MS datasheet(24/96 Pages) TI1

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TPS65094

SWCS133C – SEPTEMBER 2015 – REVISED FEBRUARY 2019

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Specifications

Electrical Characteristics: LDOs (continued)

over recommended input voltage range, TA = –40°C to +85°C and TA = 25°C for typical values (unless otherwise noted)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

VTT LDO

VIN

Power input voltage

VDDQ

3.3

VOUT

DC output voltage

Measured at VTTFB pin

VIN / 2

DC output voltage accuracy

Relative to VIN / 2, IOUT = 100 mA,

1.1 V

≤ VIN ≤ 1.5 V

–10

IOUT

DC Output Current (RMS Value

Over Operation)

1.1 V

≤ VIN ≤ 1.5 V

–500

500

Pulsed Current (Duty Cycle

Limited to Remain Below DC

RMS Specification)

source(+) and sink(–): LPDDR3 and LPDDR4

OTPs, 1.1 V

≤ VIN ≤ 1.5 V

–500

500

source(+) and sink(–): DDR3L OTPs, 1.1 V

≤

VIN ≤ 1.5 V

–1800

1800

ΔVOUT/ΔIOUT

Load regulation

Relative to VIN / 2, IOUT ≤ 10 mA,

1.1 V

≤ VIN ≤ 1.5 V

–10

Relative to VIN / 2, IOUT ≤ 500 mA,

1.1 V

≤ VIN ≤ 1.5 V

–20

Relative to VIN / 2, IOUT ≤ 1200 mA,

1.1 V

≤ VIN ≤ 1.5 V

–30

Relative to VIN / 2, IOUT ≤ 1800 mA,

1.1 V

≤ VIN ≤ 1.5 V

–40

ΔVOUT_TR

Load transient regulation

DC + AC at sense point, 1.1 V

≤ VIN ≤ 1.5 V,

(IOUT = 0 to 350 mA and 350 mA to 0) AND

(0 to –350 mA and –350 mA to 0) with 1 µs of

rise and fall time

COUT = 40 µF

–5%

IOCP

Overcurrent protection

Measured with output shorted to ground: OTPs

with VTT ILIM = 0.95 A

0.95

Measured with output shorted to ground: OTPs

with VTT ILIM = 1.8 A

1.8

VTH_PG

Power Good deassertion

threshold in percentage of target

VOUT

VOUT rising

110%

VOUT falling

95%

VTH_HYS_PG

Power Good reassertion

hysteresis entering back into

VTH_PG

VOUT rising or falling

Total ground current

VIN = 1.2 V, IOUT = 0 A

240

µA

ILKG

OFF leakage current

VIN = 1.2 V, disabled

µA

CIN

External input capacitance

µF

COUT

External output capacitance

µF

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