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PIFE32251B-R47MS 데이터시트(PDF) 11 Page - Texas Instruments

부품명 PIFE32251B-R47MS
상세설명  PMIC for Intel Apollo Lake Platform
PDF  96 Pages
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제조업체  TI1 [Texas Instruments]
홈페이지  http://www.ti.com
Logo TI1 - Texas Instruments

PIFE32251B-R47MS 데이터시트(HTML) 11 Page - Texas Instruments

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TPS65094
www.ti.com
SWCS133C – SEPTEMBER 2015 – REVISED FEBRUARY 2019
Submit Documentation Feedback
Product Folder Links: TPS65094
Specifications
Copyright © 2015–2019, Texas Instruments Incorporated
(1)
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating
Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2)
Transient for less than 5 ns.
(3)
Transient for less than 20 ns.
5
Specifications
5.1
Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)
(1)
MIN
MAX
UNIT
ANALOG
VSYS
Input voltage from battery
–0.3
28
V
PVIN3, PVIN4, PVIN5, LDO5P0, DRV5V_1_6, DRV5V_2_A1, DRVL1, DRVL2, DRVL6
–0.3
7
V
V5ANA
–0.3
6
V
PGNDSNS1, PGNDSNS2, PGNDSNS6, AGND, FBGND2
–0.3
0.3
V
DRVH1, DRVH2, DRVH6, BOOT1, BOOT2, BOOT6
–0.3
34
V
SW1, SW2, SW6
–5(2)
28
V
LX3, LX4, LX5
–2(3)
8
V
BOOTx to SWx
Differential voltage
–0.3
5.5
V
VREF, LDO3P3, FBVOUT1, FBVOUT2, FBVOUT6, FB3, FB4, FB5, ILIM1, ILIM2, ILIM6, PVINVTT,
VTT, VTTFB, PVINSWA1, SWA1, PVINSWB1_B2, SWB1, SWB2, LDOA1
–0.3
3.6
V
PVINLDOA2_A3, LDOA2, LDOA3
–0.3
3.3
V
DIGITAL IOs
DATA, CLK, PCH_PWROK, RSMRSTB, GPO
–0.3
3.6
V
PMICEN, SLP_S4B, SLP_S3B, SLP_S0B, LDOLS_EN, SWA1_EN, THERMTRIPB, IRQB, PROCHOT
–0.3
7
V
Storage temperature, Tstg
–40
150
°C
(1)
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2)
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
5.2
ESD Ratings
VALUE
UNIT
VESD
Electrostatic
discharge
Human Body Model (HBM), per ANSI/ESDA/JEDEC JS001(1)
±1000
V
Charged Device Model (CDM), per JESD22-C101(2)
±250



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