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STA1295 데이터시트(PDF) 76 Page - STMicroelectronics |
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STA1295 데이터시트(HTML) 76 Page - STMicroelectronics |
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76 / 109 page ![]() Electrical characteristics STA1295, STA1275 76/109 DS12586 Rev 5 4.4 Electrical sensitivity Based on two different tests (ESD and LU) using specific measurement methods, the product is stressed in order to determine its performance in terms of electrical sensitivity. 4.4.1 Electrostatic discharge (ESD) Note: All ESD testing is in conformity with CDF-AEC-Q100 Stress Test Qualification for Automotive Grade Integrated Circuits. A device will be defined as a failure if after exposure to ESD pulses the device no longer meets the device specification requirements. Complete DC parametric and functional testing shall be performed per applicable device specification at room temperature followed by hot temperature, unless specified otherwise in the device specification. 4.4.2 Static latch-up (LU) 4.5 Thermal characteristics Devices are available in both Consumer Grade and Automotive Grade Qualification (AEC- Q100 Grade 3). Table 31. ESD absolute maximum ratings Symbol Ratings Conditions Class Max value(1) 1. Data is based on qualification results, not tested in production. Unit VESD0 (HBM) Electrostatic discharge voltage (Human body model) Conforming to AEC-Q100-002 H2 2000 V VESD (CDM) Electrostatic discharge voltage (Charged device model) Conforming to AEC-Q100-011 C4 500 750 (for corners) Table 32. Latch-up results Symbol Ratings Conditions Class LU Static latch-up class Conforming to JESD 78 II level A Table 33. Thermal characteristics Symbol Parameter Limit values Unit Min Max Toper SR Operative ambient temperature -40 +85 °C Tj SR Operative junction temperature -40 +125 °C Tst SR Storage temperature -55 +125 °C Θj-a S Thermal resistance junction to ambient(1) — 19.6 °C/W Ψj-b S Thermal resistance junction to board(1) —11.8 °C/W |
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