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PIFE32251B-R68MS 데이터시트(PDF) 28 Page - Texas Instruments |
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PIFE32251B-R68MS 데이터시트(HTML) 28 Page - Texas Instruments |
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28 / 157 page ![]() 28 TPS650830 SLVSCF4A – DECEMBER 2014 – REVISED JULY 2016 www.ti.com Submit Documentation Feedback Product Folder Links: TPS650830 Specifications Copyright © 2014–2016, Texas Instruments Incorporated Electrical Characteristics (continued) Over recommended free-air temperature range and over recommended input voltage range (typical at an ambient temperature range of 25°C) (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT DVS slew rate for falling edge DVS falling edge slew rate for VVOUT to change from the upper target to the lower target after STANDBYZ (SLP_S0#) changes from High to Low. Total ramp time = ((Vout_high - Vout_low) / slew_rate) 4.5 5 5.5 mV / μs DVS total rise time (delay time + output ramp-rise time) Time to start switching from enable to 95% of VO(Min), Continuous slope (no slope reversal). 56 61.25 68.5 μs DVS delay time for rising edge DVS delay time from when STANDBYZ (SLP_S0#) changes from Low to High, until the output voltage begins to rise. 1 1.25 1.5 μs DVS ramp time for rising edge From first switching pulse to 95% of VO(Min), Continuous slope (no slope reversal). Total ramp time = ((Vout_high - Vout_low) / slew_rate). For Vout change = 300 mV 55 60 67 μs DVS slew rate for rising edge DVS rising edge slew rate for VVOUT to change from the lower target to the upper target after STANDBYZ (SLP_S0#) changes from Low to High. Total ramp time = ((Vout_high - Vout_low) / slew_rate). 4.5 5 5.5 mV / μs Output auto discharge resistance Discharge register value DISCHGCNT3[7:6]: 00, Default 250 860 1450 kΩ Output auto discharge resistance Discharge register value DISCHGCNT3[7:6]: 01 80 100 120 Ω Output auto discharge resistance Discharge register value DISCHGCNT3[7:6]: 10 160 200 240 Ω Output auto discharge resistance, Default Discharge register value DISCHGCNT3[7:6]: 11 400 500 600 Ω Feedback input resistance Enabled 3 MΩ Quiescent current associated with converter when enabled IVout = 0 mA, enabled, at TA = 25°C Not switching, Measured at LDO3V, VREGVR2 30 55 μA VR2 Converter CONTROL Powergood exit threshold high Fail when Vout increasing 106% 108% 110% Powergood threshold high hysteresis Good when Vout decreases (after a PGOOD fail event) -3% Powergood exit threshold low Fail when Vout decreasing 90% 92% 94% Powergood threshold low hysteresis Good when Vout increases (after a PGOOD fail event) 3% VR2_Powergood deglitch time for both rising and falling edges FBVR2P voltage must cross powergood threshold and stay for at least this time to change powergood output state. Measured from FBVR2P into or out of powergood threshold, until PGVR2 toggles, for both rising and falling edges. 27 30 33 μs VR2_Powergood Mask time during and after soft-start ramp-up time Powergood is kept low and power fault is masked during soft-start until 100 µs after the internal reference has stepped up to the final voltage setting. 9 10 11 ms VR2_Powergood Mask time during DVS ramp down (enter DVS) Powergood is kept high and masked during DVS enter, ramp down, and until 100 µs after the internal reference has stepped down to the final voltage setting. ramp- down + 90 ramp- down + 100 ramp- down + 110 μs |
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