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PIFE32251B-R68MS 데이터시트(PDF) 28 Page - Texas Instruments

부품명 PIFE32251B-R68MS
상세설명  Simple and Flexible Wide Input Voltage PMU for Mobile Computers
PDF  157 Pages
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제조업체  TI1 [Texas Instruments]
홈페이지  http://www.ti.com
Logo TI1 - Texas Instruments

PIFE32251B-R68MS 데이터시트(HTML) 28 Page - Texas Instruments

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TPS650830
SLVSCF4A – DECEMBER 2014 – REVISED JULY 2016
www.ti.com
Submit Documentation Feedback
Product Folder Links: TPS650830
Specifications
Copyright © 2014–2016, Texas Instruments Incorporated
Electrical Characteristics (continued)
Over recommended free-air temperature range and over recommended input voltage range (typical at an ambient
temperature range of 25°C) (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
DVS slew rate for falling edge
DVS falling edge slew rate for VVOUT to
change from the upper target to the lower
target after STANDBYZ (SLP_S0#)
changes from High to Low. Total ramp
time = ((Vout_high - Vout_low) /
slew_rate)
4.5
5
5.5
mV / μs
DVS total rise time (delay time +
output ramp-rise time)
Time to start switching from enable to
95% of VO(Min), Continuous slope (no
slope reversal).
56
61.25
68.5
μs
DVS delay time for rising edge
DVS delay time from when STANDBYZ
(SLP_S0#) changes from Low to High,
until the output voltage begins to rise.
1
1.25
1.5
μs
DVS ramp time for rising edge
From first switching pulse to 95% of
VO(Min), Continuous slope (no slope
reversal). Total ramp time = ((Vout_high -
Vout_low) / slew_rate). For Vout change
= 300 mV
55
60
67
μs
DVS slew rate for rising edge
DVS rising edge slew rate for VVOUT to
change from the lower target to the upper
target after STANDBYZ (SLP_S0#)
changes from Low to High. Total ramp
time = ((Vout_high - Vout_low) /
slew_rate).
4.5
5
5.5
mV / μs
Output auto discharge resistance
Discharge register value
DISCHGCNT3[7:6]: 00, Default
250
860
1450
Output auto discharge resistance
Discharge register value
DISCHGCNT3[7:6]: 01
80
100
120
Ω
Output auto discharge resistance
Discharge register value
DISCHGCNT3[7:6]: 10
160
200
240
Ω
Output auto discharge resistance,
Default
Discharge register value
DISCHGCNT3[7:6]: 11
400
500
600
Ω
Feedback input resistance
Enabled
3
Quiescent current associated with
converter when enabled
IVout = 0 mA, enabled, at TA = 25°C Not
switching, Measured at LDO3V,
VREGVR2
30
55
μA
VR2 Converter CONTROL
Powergood exit threshold high
Fail when Vout increasing
106%
108%
110%
Powergood threshold high
hysteresis
Good when Vout decreases (after a
PGOOD fail event)
-3%
Powergood exit threshold low
Fail when Vout decreasing
90%
92%
94%
Powergood threshold low
hysteresis
Good when Vout increases (after a
PGOOD fail event)
3%
VR2_Powergood deglitch time for
both rising and falling edges
FBVR2P voltage must cross powergood
threshold and stay for at least this time to
change powergood output state.
Measured from FBVR2P into or out of
powergood threshold, until PGVR2
toggles, for both rising and falling edges.
27
30
33
μs
VR2_Powergood Mask time during
and after soft-start ramp-up time
Powergood is kept low and power fault is
masked during soft-start until 100 µs after
the internal reference has stepped up to
the final voltage setting.
9
10
11
ms
VR2_Powergood Mask time during
DVS ramp down (enter DVS)
Powergood is kept high and masked
during DVS enter, ramp down, and until
100 µs after the internal reference has
stepped down to the final voltage setting.
ramp-
down +
90
ramp-
down +
100
ramp-
down +
110
μs



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