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PIFE32251B-R68MS 데이터시트(PDF) 42 Page - Texas Instruments |
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PIFE32251B-R68MS 데이터시트(HTML) 42 Page - Texas Instruments |
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42 / 157 page ![]() 42 TPS650830 SLVSCF4A – DECEMBER 2014 – REVISED JULY 2016 www.ti.com Submit Documentation Feedback Product Folder Links: TPS650830 Specifications Copyright © 2014–2016, Texas Instruments Incorporated Electrical Characteristics (continued) Over recommended free-air temperature range and over recommended input voltage range (typical at an ambient temperature range of 25°C) (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT (1) All values referred to VIH min and VIH max levels. VR5_Powergood Mask time during DVS ramp up (exit DVS) Powergood is kept high and masked during DVS exit, ramp up, and until 100 µs after the internal reference has stepped up to the final voltage setting. ramp- up + 90 ramp- up + 100 ramp- up + 110 μs VR5_Force PWM time (deglitch time) during CCM to DCM transition PWM is forced for 16 switching cycles before PFM is enabled turning off the low- side power MOSFET. Low-side FET current during each cycle must fall below the PFM current comparator valley threshold. Forced PWM allows a fast transient response and smaller output voltage ripple during the transition. 16 16 16 cycles VR5_Force PWM time during DVS ramp down (enter DVS) PWM is forced during DVS enter, ramp down, and until 10 µs after the internal reference has stepped down to the final voltage setting. Forced PWM allows a fast transient response and smaller output voltage ripple during the transition. ramp- down + 9 ramp- down + 10 ramp- down + 11 μs VR5_Force PWM time during DVS ramp up (exit DVS) PWM is forced during DVS exit, ramp up, and until 10 µs after the internal reference has stepped up to the final voltage setting. Forced PWM allows a fast transient response and smaller output voltage ripple during the transition. ramp- up + 9 ramp- up + 10 ramp- up + 11 μs Overtemperature protection 130 145 160 °C Overtemperature hysteresis 10 °C INPUT POWER SOURCE DETECTION POWER MONITORING 1-Hz CLOCK - 1-Hz EC CLOCK - pulledup to Internal Pull-up Rail = EC_VCC = 1.8 V or 3.3 V Clock frequency (1) 0.8 1 1.2 Hz Duty cycle 50% VPP Pull-up output voltage supply Pulled-Up to EC_VCC pin which should be tied to 3.3-V LDO3V pin, can also have EC_VCC pull-up to 1.8 V, instead of 3.3 V. EC_VC C V VOL_PP Low level output voltage IOL = 3 mA 0.66 V VOH_PP High level output voltage IOH = 3 mA EC_VC C - 0.66 V COINCELL SELECTOR V3v1LDO 3V1 LDO regulation voltage VDCIN > UVLO, 3.3-V and 5-V LDOs up, Measured at the V3P3A_RTC pin with respect to AGND. Place a 1-µF capacitor at V3P3A_RTC. (Do not exceed 2 µF actual capacitance). 3.0 3.1 3.2 V I3v1LDO Maximum 3V1 LDO output current Maximum output current out of 3V3RTC. 1 mA IQ_bkup_no_Vsys VBATTBKUP quiescent current, when no adapter and no main battery connected to system, automatically VBATTBKUP internally selected, internal 3.1-V LDO automatically off VVDC < UVLO, VBBC = 2.0 V to 3.0 V, VVDC = 0 V 0.03 0.45 μA IQ_bkup_with_Vsys VBATTBKUP quiescent current, when adapter or main battery connected to system, automatically VBATTBKUP internally not selected, internal 3.1-V LDO automatically on and selected. VVDC > UVLO, VBBC = 2.0 V to 3.0 V, VVDC = 7.4 V 0.15 0.85 μA |
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