| 전자부품 데이터시트 검색엔진 |
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DSP56364 데이터시트(PDF) 37 Page - Freescale Semiconductor, Inc |
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DSP56364 데이터시트(HTML) 37 Page - Freescale Semiconductor, Inc |
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37 / 148 page ![]() External Memory Expansion Port (Port A) DSP56364 Technical Data, Rev. 4.1 Freescale Semiconductor 3-21 147 Last WR assertion to RAS deassertion tRWL 2.75 × T C − 4.3 33.4 — 26.8 — ns 148 WR assertion to CAS deassertion tCWL 2.5 × T C − 4.3 33.6 — 27.0 — ns 149 Data valid to CAS assertion (write) tDS 0.25 × T C − 3.7 0.1 — — — ns 0.25 × T C − 3.0 — — 0.1 — ns 150 CAS assertion to data not valid (write) tDH 1.75 × T C − 4.0 22.5 — 17.9 — ns 151 WR assertion to CAS assertion tWCS TC − 4.3 10.9 — 8.2 — ns 152 Last RD assertion to RAS deassertion tROH 2.5 × T C − 4.0 33.9 — 27.3 — ns 153 RD assertion to data valid tGA 1.75 × T C − 7.5 — 19.0 — — ns 1.75 × T C − 6.5 — — — 15.4 ns 154 RD deassertion to data not valid7 tGZ 0.0 — 0.0 — ns 155 WR assertion to data active 0.75 × T C − 0.3 11.1 — 9.1 — ns 156 WR deassertion to data high impedance 0.25 × T C — 3.8 — 3.1 ns 1 The number of wait states for Page mode access is specified in the DCR. 2 The refresh period is specified in the DCR. 3 The asynchronous delays specified in the expressions are valid for DSP56364. 4 There are no DRAMs fast enough to fit to two wait states Page mode @ 100 MHz (See Figure 3-11). 5 All the timings are calculated for the worst case. Some of the timings are better for specific cases (e.g., t PC equals 3 × TC for read-after-read or write-after-write sequences). 6 BRW[1:0] (DRAM Control Register bits) defines the number of wait states that should be inserted in each DRAM out-of-page access. 7 RD deassertion will always occur after CAS deassertion; therefore, the restricted timing is t OFF and not tGZ. Table 3-10 DRAM Page Mode Timings, Two Wait States1, 2, 3, 4 (continued) No. Characteristics Symbol Expression5 66 MHz 80 MHz Unit Min Max Min Max |
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