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DSP56364 데이터시트(PDF) 50 Page - Freescale Semiconductor, Inc |
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DSP56364 데이터시트(HTML) 50 Page - Freescale Semiconductor, Inc |
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50 / 148 page ![]() External Memory Expansion Port (Port A) DSP56364 Technical Data, Rev. 4.1 3-34 Freescale Semiconductor 173 Column address valid to CAS assertion tASC 0.75 × T C − 4.0 3.5 — ns 174 CAS assertion to column address not valid tCAH 6.25 × T C − 4.0 58.5 — ns 175 RAS assertion to column address not valid tAR 9.75 × T C − 4.0 93.5 — ns 176 Column address valid to RAS deassertion tRAL 7 × T C − 4.0 66.0 — ns 177 WR deassertion to CAS assertion tRCS 5 × T C − 3.8 46.2 — ns 178 CAS deassertion to WR4 assertion tRCH 1.75 × T C − 3.7 13.8 — ns 179 RAS deassertion to WR4 assertion tRRH 0.25 × T C − 2.0 0.5 — ns 180 CAS assertion to WR deassertion tWCH 6 × T C − 4.2 55.8 — ns 181 RAS assertion to WR deassertion tWCR 9.5 × T C − 4.2 90.8 — ns 182 WR assertion pulse width tWP 15.5 × T C − 4.5 150.5 — ns 183 WR assertion to RAS deassertion tRWL 15.75 × T C − 4.3 153.2 — ns 184 WR assertion to CAS deassertion tCWL 14.25 × T C − 4.3 138.2 — ns 185 Data valid to CAS assertion (write) tDS 8.75 × T C − 4.0 83.5 — ns 186 CAS assertion to data not valid (write) tDH 6.25 × T C − 4.0 58.5 — ns 187 RAS assertion to data not valid (write) tDHR 9.75 × T C − 4.0 93.5 — ns 188 WR assertion to CAS assertion tWCS 9.5 × T C − 4.3 90.7 — ns 189 CAS assertion to RAS assertion (refresh) tCSR 1.5 × T C − 4.0 11.0 — ns 190 RAS deassertion to CAS assertion (refresh) tRPC 4.75 × T C − 4.0 43.5 — ns 191 RD assertion to RAS deassertion tROH 15.5 × T C − 4.0 151.0 — ns 192 RD assertion to data valid tGA 14 × T C − 5.7 — 134.3 ns 193 RD deassertion to data not valid3 tGZ 0.0 — ns 194 WR assertion to data active 0.75 × T C − 0.3 7.2 — ns 195 WR deassertion to data high impedance 0.25 × T C —2.5 ns 1 The number of wait states for out-of-page access is specified in the DCR. 2 The refresh period is specified in the DCR. 3 RD deassertion will always occur after CAS deassertion; therefore, the restricted timing is t OFF and not tGZ. 4 Either t RCH or tRRH must be satisfied for read cycles. Table 3-16 DRAM Out-of-Page and Refresh Timings, Fifteen Wait States1, 2 (continued) No. Characteristics3 Symbol Expression Min Max Unit |
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